Native oxide removal application usine NF3/NH3 remote plasma for Ni suicide process

Advanced Metallization Conference (AMC)

Volumn 2006, Issue , 2006, Pages 611-616

  Kuratomi, Takashi ^a   Tanaka, Keiichi ^a   Diehl, Daniel I ^a   Phan, See Eng ^b   Lu, Xinliang ^b   Or, David ^b   Lei, Jianxln ^b   Lai, Gigi ^b   Lavu, Kishore ^b   Jiang, Chong ^b   Moraes, Kevin ^b   Kao, Chien Teh ^b   Futase, Takuya ^c   Maekawa, Kazuyoshi ^c  

^a Applied Materials Japan Inc   (Japan)

^b APPLIED MATERIALS INC   (United States)

^c RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Native oxide; NF3; NH3; Ni suicide; Preclean

Indexed keywords

CMOS INTEGRATED CIRCUITS; LEAKAGE CURRENTS; NICKEL; PLASMAS; SEMICONDUCTOR DEVICES; SHEET RESISTANCE;

NATIVE OXIDE; NI SUICIDE; PRECLEAN;

OXIDES;

EID: 33947269878     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Q. Xiang, Abst. of 201 st Elec. Soc. Mtg., 2002-1, 583 (2002).
2. Y. Hu, S. P. Tay, J.Vacuum Sci. Tech. (B), 19(2), 376 (2001).
3. H. Ogawa, et al., Japan J. Appl. Phys.41, 5349 (2002).
4. H. Nishino, et al., J Appl. Phys. 74, 1345 (1993).
5. M.Honda, et al., IITC Conf. Proceedings 9.4 (2005).
6. See-Eng Phan, et al., Semicon 2006, 1-892568-79-9 (2006).