Thermo-piezoelectric Si3N4 cantilever array on CMOS circuit for high density probe-based data storage

Sensors and Actuators, A: Physical

Volumn 135, Issue 1, 2007, Pages 67-72

  Kim, Young Sik ^a   Jang, Seongsoo ^a   Lee, Caroline Sunyong ^b   Jin, Won Hyeog ^a   Cho, II Joo ^a   Ha, Man Hyo ^a   Nam, Hyo Jin ^a   Bu, Jong Uk ^a   Chang, Sun II ^c   Yoon, Euisik ^c  

^a LG Electronics Inc   (South Korea)

^b Hanyang University   (South Korea)

^c UNIVERSITY OF MINNESOTA   (United States)

Author keywords

Atomic force microscopy; Electrical coupling; High speed; Piezoresistor; PZT actuator; PZT cantilever; Thermo piezoelectric cantilever; Wafer level transfer

Indexed keywords

ATOMIC FORCE MICROSCOPY; CMOS INTEGRATED CIRCUITS; DATA STORAGE EQUIPMENT; PIEZOELECTRIC DEVICES; POLYSILICON; SILICON WAFERS;

ELECTRICAL COUPLING; PIEZORESISTORS; PZT ACTUATORS; PZT CANTILEVERS; THERMO-PIEZOELECTRIC CANTILEVER; WAFER-LEVEL TRANSFER;

SILICON NITRIDE;

EID: 33947243456     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2006.10.021     Document Type: Article

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