Preparation and properties of colloidal nanosize silica dioxide for polishing of monocrystalline silicon wafers

Materials Science- Poland

Volumn 20, Issue 2, 2002, Pages 19-22

  Gaishun, V E ^a   Tulenkova, O I ^a   Melnichenko, I M ^a   Baryshnin, S A ^a   Potapenok, Y A ^a   Xlebokazov, A P ^a   Strek W ^b  

^a FRANCISK SKORINA GOMEL STATE UNIVERSITY   (Belarus)

^b INSTITUTE OF LOW TEMPERATURE AND STRUCTURE RESEARCH   (Poland)

Author keywords

Colloidal silica; Metallographic polishing; Silicon

Indexed keywords

EID: 33947231085     PISSN: 01371339     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (4)

1. PAYNE C.C., U.S. Patent 4, 169,337, Process for Polishing Semi-Conductor Materials, October 2, 1979.
2. YANCEY P.G., U.S. Patent 4, 242, 842, Precision Polishing Suspension and Metod for Making Same, January 6, 1981.
3. PAYNE C.C., U.S. Patent 4, 558, 421, Aqueous Silica Compositions for Polishing Silicon Wafers, Silica Gel or Sol and Priperazine Compound, May 13, 1986.
4. ILER R.K., The chemistry of silica, Moscow, "Mir", p. II, 1982, p. 135.