Electronic structure of the 4H(b)-NbSe2 and 3R-MoSe2 polymorphous forms as studied by the XPS and XES methods

Metallofizika i Noveishie Tekhnologii

Volumn 28, Issue 11, 2006, Pages 1451-1470

  Khyzhun, O Yu ^a   Karpets, M V ^a   Sinelnichenko, O K ^a  

^a FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE   (Ukraine)

Author keywords

Electronic structure; Molybdenum diselenide; Niobium diselenide; Polymorphous transformation; X ray emission spectroscopy; X ray photoelectron spectroscopy

Indexed keywords

EID: 33947184811     PISSN: 10241809     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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