Germanium MOS technology for infra-red detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 573, Issue 1-2, 2007, Pages 65-67

  Ruddell, Fred H ^a   Montgomery, John H ^a   Gamble, Harold S ^a   Denvir, Donal ^b  

^a QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

^b OXFORD INSTRUMENTS PLASMA TECHNOLOGY   (United Kingdom)

Author keywords

Deposited SiO2 dielectric; Ge MOS capacitor; Infra red detector

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; ENERGY GAP; MOS CAPACITORS; SILICA; SUBSTRATES;

DIELECTRIC DISPLAYS; GERMANIUM MOS TECHNOLOGY; OUTDIFFUSION;

INFRARED DETECTORS;

EID: 33847744618     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2006.10.253     Document Type: Article

References (4)

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