Reliability and design qualification of a sub-micron tungsten silicide E-Fuse

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 152-156

  Tonti, W R ^a   Fifield, J A ^b   Higgins, J ^b   Guthrie, W H ^b   Berry, W ^b   Narayan, C ^c  

^a IBM   (United States)

^b IBM MICROELECTRONICS   (United States)

^c IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT DESIGN; POLYSILICON; SILICIDES; TUNGSTEN;

DESIGN QUALIFICATIONS; DESIGN RULES; DRIVING FORCES; ELECTRICAL FUSE; LASER SOURCES; REPAIR OPTIONS; REPAIR SOLUTION; TUNGSTEN SILICIDE;

RELIABILITY;

EID: 33847740181     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315316     Document Type: Conference Paper

References (11)

1. G. Shirley, S Defect Reliability Statistics with Redundancy 2002 IRPS Tutorial, topic
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3. J.P. Gambino,E.G. Colgan,A. G. Domenicucci,B. Cunningham: The Thermal Stability of CoSi2 on Polycristalline Silicon: The Tffect of Silicon Grain Size and Metal Thickness
4. A. Kainitsky, I Saadat, A Bergemont, P Francis: CoSi2 integrated Tuses on polysilicon for low voltage 0.18um CMOS applications, 1999IEDM
5. JESD-22 A113, Preconditioning of Nonhenmetic Surface Mount Tevices Prior to Reliability Testing
6. JESD-22 A108, Temperature, Bias, and Operating Life
7. JESD-22 A104, Temperature Cycling
8. JESD-22 Al 10, Highly Accelerated Temperature and Humidity Ttress Test (HAST)
9. EIA Bulletin SSB-1
10. JEP-122, Failure Mechanisms and Models for Silicon Temiconductor Devices
11. U.S. patent pending.