Application of high-power semiconductor technology in DC traction circuit-breakers

Proceedings of the Inaugural IEEE PES 2005 Conference and Exposition in Africa

Volumn 2005, Issue , 2005, Pages 494-498

  De Lange, G B ^a   Chol, A M ^a   Ijumba, N M ^a  

^a UNIVERSITY OF KWAZULU NATAL   (South Africa)

Author keywords

Fibre optic cable; HSCB; IGCT; OHTE

Indexed keywords

ELECTRIC TRACTION; FIBER OPTICS; SEMICONDUCTOR DEVICES; SWITCHING CIRCUITS;

DC TRACTION CIRCUITS; HIGH POWER SEMICONDUCTOR TECHNOLOGY; SWITCHING ELEMENT;

ELECTRIC CIRCUIT BREAKERS;

EID: 33847707937     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/pesafr.2005.1611872     Document Type: Conference Paper

References (7)

1. ABB, Integrated Gate Commutated Thyristors Application note, Applying IGCT's, March 2003.
2. ABB, Integrated Gate Commutated Thyristors Application note, Applying IGCT gate units, December 2002.
3. ABB, High power semiconductors, Short form catalogue, 2003.
4. DYNEX, Improved gate drive for GTO series connections, Application note AN5177, July 2002.
5. SPOORNET, Specification number CEE-0099.2002, November 2002, Specification for 3 kilovolt DC high speed circuit breakers for traction substations.
6. Spoornet, Technical memorandum-TM(I) 96/05, Ref. S.I. (LAB) 12/5/3/4/8/28, Typical current and voltage traces measured on a HSCB under short circuit conditions, May 1996.
7. South African Transport Services, Electrical Engineering Department, Ref. CEE/LAB 20/8/6, Report number E.LAB 23/83, High speed circuit breaker tests, Crown traction substation, January 1984.