Magnetic properties of MnAs nanoclusters embedded in a GaAs semiconductor matrix

Journal of Magnetism and Magnetic Materials

Volumn 310, Issue 2 SUPPL. PART 3, 2007, Pages 1932-1934

  Hai, Pham Nam ^a   Takahashi, Keisuke ^a   Yokoyama, Masafumi ^a   Ohya, Shinobu ^a,b   Tanaka, Masaaki ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Dipolar interaction; Magnetic tunnel junction; MnAs nanocluster; Tunneling magnetoresistance

Indexed keywords

COERCIVE FORCE; MAGNETIC PROPERTIES; MAGNETORESISTANCE; METALLIC FILMS; NANOCLUSTERS; THIN FILMS; TUNNEL JUNCTIONS;

DIPOLAR INTERACTIONS; FERROMAGNETIC ELECTRODES; MAGNETIC TUNNEL JUNCTIONS (MTJ); REMANENT MAGNETIZATION; TUNNELING MAGNETORESISTANCE (TMR);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33847663730     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2006.10.766     Document Type: Article

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