Quantitative electrical analysis of FIB prepared vias on BiCMOS and CMOS090 designs

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn 2006, Issue , 2006, Pages 67-70

  Domenges B ^a   Poirier, P ^a  

^a UNIVERSITÉ DE CAEN   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; INTEGRATED CIRCUIT LAYOUT; ION BEAMS;

BICMOS; ION BEAM CURRENT; KELVIN PROBE TECHNIQUE; SUBMICROMETER VIAS;

FOCUSED ION BEAMS;

EID: 33847657000     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. Tao T., Ro J.S., Melngailis J., Xue Z. and Kaesz H.D., J.Vac. Sci. Technol., B8 (1990), 1826-1829
2. Puretz J. and Swanson L.W., J.Vac. Sci. Technol., B10 (1992), 2695-2698