Excited state properties of the p- and n-type semiconductors of thiazolothiazole derivative having thiophene and trifluormethylphenyl rings

Computational Materials Science

Volumn 39, Issue 2, 2007, Pages 376-380

  Sun, Yu ^a   Gu, Wenxiang ^b   Li, Yuanzuo ^a   Li, Yongqing ^a   Ma, Fengcai ^a  

^a LIAONING UNIVERSITY   (China)

^b SOUTH CHINA AGRICULTURAL UNIVERSITY   (China)

Author keywords

Charge difference density; Electron hole coherence; p and n type semiconductors; Transition density

Indexed keywords

ABSORPTION; DERIVATIVES; ELECTRONS; EXCITED STATES; PHASE TRANSITIONS; QUANTUM THEORY;

ABSORPTION FREQUENCIES; CHARGE DIFFERENCE DENSITY; ELECTRON HOLE COHERENCE; TRANSITION DENSITY;

SEMICONDUCTOR MATERIALS;

EID: 33847644572     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2006.07.007     Document Type: Article

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