Fabrication of Ge2Sb2Te5 based PRAM device at 60 nm scale by using UV nanoimprint lithography

Microelectronic Engineering

Volumn 84, Issue 4, 2007, Pages 573-576

  Lee, Heon ^a   Hong, Sung Hoon ^a   Yang, Ki Yeon ^a   Jung, Gun Young ^b  

^a Korea University   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Chalcogenide; Lift off; Nanoimprint lithography; Phase change memory; Phase transition

Indexed keywords

CHALCOGENIDES; GERMANIUM COMPOUNDS; NANOIMPRINT LITHOGRAPHY; NANOTECHNOLOGY; PHASE TRANSITIONS; PHOTOLITHOGRAPHY; ULTRAVIOLET RADIATION;

NON VOLATILE MEMORY; PHASE CHANGE DEVICE ARRAYS; PHASE CHANGE RANDOM ACCESS MEMORY (PRAM); UV NANOIMPRINT LITHOGRAPHY;

RANDOM ACCESS STORAGE;

EID: 33847631255     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.11.009     Document Type: Article

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