100MHz-500MHz, 1 watt distributed power amplifier with discrete MOSFET devices

2005 Asia-Pacific Conference on Applied Electromagnetics, APACE 2005 - Proceedings

Volumn 2005, Issue , 2005, Pages 198-202

  Siew, Tan Teik ^a,b   Bin Ain, Mohd Fadzil ^a   Hassan, Syed Idris Syed ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC IMPEDANCE MEASUREMENT; FABRICATION; MOSFET DEVICES; NATURAL FREQUENCIES; NETWORKS (CIRCUITS);

DISTRIBUTED POWER AMPLIFIERS; OUTPUT IMPEDANCE; OUTPUT POWER;

POWER AMPLIFIERS;

EID: 33847297628     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APACE.2005.1607806     Document Type: Conference Paper

References (5)

1. J. B. Beyer, S. N. Prasad, R. C. Becker, J. E. Nordman, and G. K. Hohenwarter, "MESFET distributed amplifier design guidelines," IEEE Trans. Microwave Theory Tech., vol. MTT-32, pp. 268-275, Mar. 1984.
2. Ayasli, R. L. Mozzi, J. L. Vorhaus, L. D. Reynolds, and R. A. Pucel, "A monolithic GaAs 1-13 GHz traveling-wave amplifier," IEEE Trans. Microwave Theory Tech., vol. MTT-30, pp. 976-981, July 1982.
3. "d ed. John Wiley & Sons, Inc. 1998.
4. Y. Ayasli, S. Miller, R. Mozzi, and L. Hanes, "Capacitively coupled traveling-wave power amplifier," IEEE Trans. Microwave Theory Tech., vol. MTT-32, pp, 1704-1709,
5. Datasheet of RD01MUS1, Mitsubishi.