Effect of post annealing on La0.7Sr0.3MnO3 thin films

Acta Physica Polonica A

Volumn 111, Issue 1, 2007, Pages 117-122

  Cheng, W F ^a   Leung, C W ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE; LANTHANUM COMPOUNDS; PHASE TRANSITIONS; PULSED LASER DEPOSITION;

CURIE TEMPERATURES; FILMS THICKNESS; OXYGEN PRESSURES;

THIN FILMS;

EID: 33847260771     PISSN: 05874246     EISSN: None     Source Type: Journal    
DOI: 10.12693/APhysPolA.111.117     Document Type: Conference Paper

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