A low-noise, high-linearity balanced amplifier in enhancement-mode GaAs pHEMT technology for wireless base-stations

GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium

Volumn 2005, Issue , 2005, Pages 461-464

  Chong, Thomas ^a  

^a Wireless Semiconductor Division   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

GAIN CONTROL; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE; WIRELESS TELECOMMUNICATION SYSTEMS;

HIGH-LINEARITY BALANCED AMPLIFIERS; PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR (E-PHEMT); WIRELESS BASE-STATIONS;

POWER AMPLIFIERS;

EID: 33847205730     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. S. Liao, "Microwave Devices and Circuits", 3ed, pp154-156, Prentice-Hall, 1990
2. Wu et al, "An Enhancement-Mode pHEMT for Single-Supply Power Amplifiers", HP Journal, Feb 1998, pp39-51.
3. P. R. Gray et al, "Analysis and Design of Analog Integrated Circuits," 4ed, pp 308-309, Wiley, 2001
4. Anaren Xinger II XC1900A-03 datasheet