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Volumn 2, Issue , 2005, Pages 4-7

A new direct method for HBT B-E & B-C distributed capacitances and intrinsic resistances extraction

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITANCE MEASUREMENT; ELECTRIC RESISTANCE; PARAMETER ESTIMATION; VOLTAGE MEASUREMENT;

EID: 33847200798     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APMC.2005.1606459     Document Type: Conference Paper
Times cited : (2)

References (6)
  • 1
    • 33847220311 scopus 로고    scopus 로고
    • J.C.J. Paasschens , W.J. Kloosterman, The Mextram Bipolar Transistor Model level 504, Nat.Lab. Unclassified Report NL-UR 2000/811, September 2001
    • J.C.J. Paasschens , W.J. Kloosterman, The Mextram Bipolar Transistor Model level 504, Nat.Lab. Unclassified Report NL-UR 2000/811, September 2001
  • 2
    • 0023399799 scopus 로고
    • A compact physical large-signal model for high-speed bipolar transistors at high current densities-part I: One-dimensional model
    • H. Stubing, H. M. Rein,"A compact physical large-signal model for high-speed bipolar transistors at high current densities-part I: one-dimensional model". IEEE Trans. Electron Devices, vol.34, 1987, pp: 1741-1751
    • (1987) IEEE Trans. Electron Devices , vol.34 , pp. 1741-1751
    • Stubing, H.1    Rein, H.M.2
  • 3
    • 0042594502 scopus 로고    scopus 로고
    • Large-Signal HBT Model with Improved Collector Transit Time Formulation for GaAs and InP Technologies
    • Masaya Iwamoto, David E.Root, Jonathan B.Scott, Alex Cognata, Peter M.Asbeck, Brian Hughes, Don C.D'Avanzo, "Large-Signal HBT Model with Improved Collector Transit Time Formulation for GaAs and InP Technologies", IEEE MTT-S Digest ,vol.2, 2003,pp:635-638
    • (2003) IEEE MTT-S Digest , vol.2 , pp. 635-638
    • Iwamoto, M.1    Root, D.E.2    Scott, J.B.3    Cognata, A.4    Asbeck, P.M.5    Hughes, B.6    D'Avanzo, D.C.7
  • 6
    • 0035168261 scopus 로고    scopus 로고
    • B.Ardouin, T.Zimmer, H.Mnif, P.Fouillat,Direct method for Bipolar Based-Emitter and Base-collector Capacitance Splitting using High Frequency measurents, Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001,pp:114-117
    • B.Ardouin, T.Zimmer, H.Mnif, P.Fouillat,"Direct method for Bipolar Based-Emitter and Base-collector Capacitance Splitting using High Frequency measurents", Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001,pp:114-117


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.