Impact of epitaxial NiSi2 source/drain on short channel effect and line edge roughness in extremely scaled MOSFETs

2005 International Semiconductor Device Research Symposium

Volumn 2005, Issue , 2005, Pages 111-112

  Migita, S ^a   Mise, N ^b   Watanabe, Y ^b   Kadoshima, M ^b   Fujiwara, H ^b   Ohno, M ^b   Takaba, H ^b   Iwamoto, K ^b   Ogawa, A ^b   Nabatame, T ^b   Satake, H ^b   Toriumi, A ^a,c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33847191732     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. http://public.itrs.net/
2. B.-Y. Tsui and C.-P. Lin, IEEE EDL 25, p.430 (2004).
3. A. Kinoshita et al., VLSI Symp. Tech. Dig., p. 169 (2004) and p. 158 (2005).
4. N. Mise et al., Silicon Nano. Workshop Abst., p.20 (2005).
5. Y. Watanabe et al., DRC Dig., p.197 (2005).