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Volumn 17, Issue 2-4, 2006, Pages 951-953

The electronic structure of Ni doped rutile TiO2

Author keywords

Defect states; Density functional theory; Electronic structure; Ni doped TiO2; Partial charge density

Indexed keywords

BAND STRUCTURE; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; ENERGY GAP; NICKEL; PROBABILITY DENSITY FUNCTION;

EID: 33847191074     PISSN: 13853449     EISSN: 15738663     Source Type: Journal    
DOI: 10.1007/s10832-006-7985-6     Document Type: Conference Paper
Times cited : (16)

References (23)
  • 10
    • 0037472235 scopus 로고    scopus 로고
    • Q.G. Yan, W.Z. Weng, H.L. Wan, H. Toghiani, R.K. Toghani, and C.U. Pittman Jr., Appl. Catal. A, 239, 43 (2003).
    • Q.G. Yan, W.Z. Weng, H.L. Wan, H. Toghiani, R.K. Toghani, and C.U. Pittman Jr., Appl. Catal. A, 239, 43 (2003).
  • 22
    • 21244471846 scopus 로고    scopus 로고
    • Cambridge University Press
    • R.M. Martin, Electronic Structure (Cambridge University Press, 2004), p. 264.
    • (2004) Electronic Structure , pp. 264
    • Martin, R.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.