10Gbit/s amplified reflective electroabsorption modulator for colorless access networks

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn 2006, Issue , 2006, Pages 168-170

  Garreau, A ^a   Decobert, J ^a   Kazmierski, C ^a   Cuisin, M C ^a   Provost, J G ^a   Sillard, H ^a   Blache, F ^a   Carpentier, D ^a   Landreau, J ^a   Chanclou, P ^b  

^a NOKIA RESEARCH CENTER   (United States)

^b ORANGE LABS   (France)

Author keywords

10Gbit s FTTH; AlInGaAs; Colorless remote modulation; Electroabsorption modulator; Semiconductor amplifier

Indexed keywords

LIGHT MODULATION; MONOLITHIC INTEGRATED CIRCUITS; OPTICAL FIBERS; SEMICONDUCTOR DEVICES;

10GBIT/S FTTH; COLORLESS REMOTE MODULATION; ELECTROABSORPTION MODULATOR; SEMICONDUCTOR AMPLIFIERS;

LIGHT MODULATORS;

EID: 33847116124     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. F. Payoux, P. Chanclou, M. Moignard, R. Brenot, " Gigabit Optical Access using WDM PON based on Spectrum Slicing and Reflective SOA", ECOC2005
2. Sang-Mook Lee, Ki-Man Choi, Sil-Gu Mun, Jung-Hyung Moon, and Chang-Hee : "Dense WDM-PON Based on Wavelength-Locked Fabry-Pérot Laser Diodes Lee", Photon Techn Lett, Vol. 17, No. 7, July 2005 (p1579).
3. Giuseppe Talli and Paul D. Townsend : "Feasibility Demonstration of 100km Reach DWDM SuperPON with Upstream Bit Rates of 2.5Gb/s and 10Gb/s", OFC 2005, paper OFI.1
4. K. Asaka and al., " Lossless Electroabsorption Modulator Monolithically Integrated With a Semiconuctor Optical Amplifier and a Passive Waveguide", Photon Techn Lett, Vol. 15, No. 5, May 2003 (p679).
5. th Int. Conf. on IPRM, May-31 June-4, 2004, Kagoshima, Japan
6. J.-G. Provost and al., "High Extinction Ratio Picosecond Pulses at 40GHz Rate over 40nm with an AlGaInAs EAM Characterised by a Spectrogram Acquisition Method", ECOC 2005, Glasgow UK 25-29 Sept