A field effect based hydrogen sensor for low and high concentrations

ECS Transactions

Volumn 3, Issue 10, 2006, Pages 223-230

  Moritz, W ^a   Fillipov, V ^b   Vasiliev, A ^b,c   Cherkashinin, G ^a   Szeponik, J ^d  

^a HUMBOLDT UNIVERSITY   (Germany)

^b KURCHATOV INSTITUTE   (Russian Federation)

^c UNIVERSITAT ROVIRA I VIRGILI   (Spain)

^d BST Bio Sensor Technologie GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; LANTHANUM COMPOUNDS; PALLADIUM; PARTIAL PRESSURE; SEMICONDUCTOR MATERIALS; SILICON;

LOWER EXPLOSION LEVEL (LEL); ROOM TEMPERATURE; SEMICONDUCTOR SENSOR;

CHEMICAL SENSORS;

EID: 33847043557     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2357262     Document Type: Conference Paper

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