Electronic structure of SP2 trap states in amorphous carbon

Surface and Interface Analysis

Volumn 39, Issue 2-3, 2007, Pages 132-134

  Fotopoulos, N ^a   Xanthakis, J P ^a  

^a NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

Author keywords

Amorphous carbon; Defect states; Electronic structure; Hartree Fock; Trap states

Indexed keywords

AMORPHOUS MATERIALS; BINDING ENERGY; CARBON; DEFECTS; ELECTRONIC STRUCTURE; FIELD EMISSION CATHODES; TRANSPORT PROPERTIES;

AMORPHOUS CARBON; DEFECT STATES; MOLECULAR ORBITALS; TRAP STATES;

ELECTRON TRAPS;

EID: 33847040729     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2475     Document Type: Conference Paper

References (7)

1. Amaratunga EAJ, Silva SRP. Appl. Phys. Lett. 1996; 68: 2529.
2. Forbes RG. Solid-State Electron. 2001; 45: 779.
3. Modinos A, Xanthakis JP. Appl. Phys. Lett. 1998; 73: 1874.
4. Xanthakis JP. Solid-State Electron. 2001; 45: 945.
5. Silva SRP, Robertson J, Amaratunga GAJ, Rafferty B, Brown LM, Schawn J, Franceschini DF, Mariotto GJ. J. Appl. Phys. 2002; 91: 4580.
6. Carey JD, Forrest RD, Poa CH, Silva SRP. J. Vac. Sci. Technol. 2003; B21(1633).
7. Cox SFJ, Cottrell SP, Chariton M, Donnelly PA, Ewels C, Reggie M, Hourahine B. J. Phys.: Condens. Matter 2001; 13(2169).