Grain-boundary segregation in nanocrystalline Cu-Bi layers studied with the tomographic atom probe

Surface and Interface Analysis

Volumn 39, Issue 2-3, 2007, Pages 246-250

  Wolde Giorgis, Daniel ^a   Al Kassab, Tala'at ^a   Kirchheim, Reiner ^a  

^a Institut fur Materialphysik   (Germany)

Author keywords

Bi; Cu; Field ion microscopy; FIM; Grain boundary segregation; Sputter deposition; TAP; Tomographic atom probe

Indexed keywords

BISMUTH; COPPER; GRAIN BOUNDARIES; GRAIN GROWTH; NANOSTRUCTURED MATERIALS; PROBES; SEGREGATION (METALLOGRAPHY); SPUTTER DEPOSITION; TOMOGRAPHY;

COLUMNAR NANOCRYSTALLINE GRAIN GROWTH; FIELD ION MICROSCOPY (FIM); GRAIN BOUNDARY SEGREGATION; TOMOGRAPHIC ATOM PROBE (TAP);

MULTILAYERS;

EID: 33847037886     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2523     Document Type: Conference Paper

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