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Volumn 111, Issue 4, 2007, Pages 573-577

Electronic properties of Si and Ge atoms doped in clusters: In nSim and innGem

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRONIC PROPERTIES; GERMANIUM COMPOUNDS; NEGATIVE IONS; PHOTOELECTRON SPECTROSCOPY; PHOTOIONIZATION;

EID: 33847035176     PISSN: 10895639     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp065921w     Document Type: Article
Times cited : (20)

References (30)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.