Sidewall dislocations in embedded SiGe source/drain areas of MOSFETs and their impact on the device performance

ECS Transactions

Volumn 3, Issue 7, 2006, Pages 713-718

  Kammler, T ^a   Peidous, I ^a   Wei, A ^a   Romero, K ^a   Reichel, C ^a   Heinemann, S ^a   Engelmann, H J ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DIFFRACTION; EMBEDDED SYSTEMS; LATTICE CONSTANTS; MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

COMPUTER MODELING; DEVICE PERFORMANCE; SIDEWALL DISLOCATIONS; STRUCTURAL QUALITY;

MOSFET DEVICES;

EID: 33846965976     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355866     Document Type: Conference Paper

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