Doping of silicon crystals with Bi and other volatile elements by the pedestal growth technique

ECS Transactions

Volumn 3, Issue 4, 2006, Pages 53-59

  Riemann, H ^a   Abrosimov, N V ^a   Notzel N ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH; CRYSTAL STRUCTURE; DOPING (ADDITIVES); LASER APPLICATIONS; LITHIUM; MAGNESIUM; PURIFICATION;

AXIAL HOLES; LASER MATERIALS; MONOCRYSTALLINE; PEDESTAL GROWTH TECHNIQUE;

SILICON;

EID: 33846961154     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355745     Document Type: Conference Paper

References (4)

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2. A. Muiznieks, A. Rudevics, K. Lacis, H. Riemann, A. Lüdge, F.W. Schulze, B. Nacke. International Scientific Colloquium, Modelling for Material Processing, Riga, June 8-9, 2006, pp. 89-94
3. V.M. Shastin, R.Kh. Zhukavin, E.E. Orlova, S.O. Pavlov, M.H. Rummeli, H.-W. Hübers, J.N. Hovenier, T.O. Klaassen, H. Riemann, I.V. Bradley, A.F.G. van der Meer, stimulated terahertz emission from group-V donors in silicon under intracenter photoexcitation, Appl. Phys. Lett. 80 (2002)
4. A. Tilderquist, M. Kleverman, H.G. Grimmeis, interstitial magnesium double donor in silicon, Phys.Rev.B 49 (1994) 16338