Cross-sectional TEM observations of Si wafers irradiated with gas cluster ion beams

AIP Conference Proceedings

Volumn 866, Issue , 2006, Pages 194-197

  Isogai, Hiromichi ^a   Toyoda, Eiji ^a   Senda, Takeshi ^a   Izunome, Koji ^a   Kashima, Kazuhiko ^a   Toyoda, Noriaki ^b   Yamada, Isao ^b  

^a Nissei Bldg   (Japan)

^b UNIVERSITY OF HYOGO   (Japan)

Author keywords

Flatness; Gas cluster ion beam; GCIB; High temperature anneal; Planarization; Si (100)

Indexed keywords

EID: 33846953213     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2401493     Document Type: Conference Paper

References (2)

1. http://www.itrs.net/Common/2005ITRS/FEP2005.pdf.
2. I. Yamada, J. Matsuo, N. Toyoda and A. Kirkpatrick, Mater. Sci. Eng. R., 34, (2001) 231-295.