Thickness and temperature dependence of electrical resistivity of p-type Bi0.5Sb1.5Te3 thin films prepared by flash evaporation method

Journal of Physics D: Applied Physics

Volumn 39, Issue 23, 2006, Pages 5064-5068

  Duan, Xingkai ^a   Yang, Junyou ^a   Zhu, W ^a   Fan, X A ^a   Bao, S Q ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BISMUTH COMPOUNDS; ELECTRIC CONDUCTIVITY; EVAPORATION; GRAIN SIZE AND SHAPE; SCANNING ELECTRON MICROSCOPY;

COMPOSITIONAL ANALYSIS; GLASS SUBSTRATES; INVERSE THICKNESS;

THIN FILMS;

EID: 33846893234     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/39/23/024     Document Type: Article

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