Investigation of Ga contamination due to analysis by dual beam FIB

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn 2002-January, Issue , 2002, Pages 174-178

  Sakata, T ^a   Takahashi, H ^a   Sekine, T ^a  

^a JEOL LTD   (Japan)

Author keywords

Atomic beams; Electron beams; Fabrication; Ion beams; Ion sources; Large scale integration; Milling; Production systems; Scanning electron microscopy; Surface contamination

Indexed keywords

ATOMIC BEAMS; CONTAMINATION; ELECTRON BEAMS; ELECTRON MICROSCOPY; FABRICATION; INTEGRATED CIRCUITS; ION BEAMS; ION SOURCES; LSI CIRCUITS; MILLING (MACHINING); SCANNING ELECTRON MICROSCOPY;

FOCUSED-ION-BEAM SYSTEM; INTERNAL STRUCTURE; PRODUCTION SYSTEM; SCANNING ION MICROSCOPY; SPATIAL RESOLUTION; SPUTTERED SPECIES; SURFACE CONTAMINATIONS; TYPICAL APPLICATION;

FAILURE ANALYSIS;

EID: 33846854025     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPFA.2002.1025643     Document Type: Conference Paper

References (3)

1. T. Sakata, Y. Iijima, S. Maeda and T. Sekine, "Investigation on Ga Contamination due to Dual Beam FIB for In-line Use", Journal of Surface Analysis, Surface Analysis Society of Japan, Tokyo, 1999, Vol.5, No.1, pp.120-123
2. T. Sekine and T. Sakata, "JFS-9815 Dual Beam FIB", JEOL NEWS, JEOL LTD., Tokyo, 1998, Vol. 33E, No. 1, pp.41-47.
3. J. Kawai, S. Hayakawa, Y. Goshi, Y. Kitajima, and K. Maeda, "Total Reflection X-ray Photoelectron Spectroscopy", J. Electron. Spectrosc. Relat. Phenom., ELSEVIER, Amsterdam, 1995, Vol. 76, pp.313-318