Oxidation of Ti 3SiC 2 between 900 and 1200 °C in Air

Oxidation of Metals

Volumn 67, Issue 1-2, 2007, Pages 51-66

  Lee, D B ^a   Park, S W ^b  

^a Sungkyunkwan University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

Carbon; Oxidation; Silicon; Titanium

Indexed keywords

INTERMEDIATES; NANOMETERS; OXYGEN AFFECTED ZONES; SCALE MATRIX INTERFACES;

CARBON; CRYSTALLINE MATERIALS; DIFFUSION; HOT PRESSING; INTERFACES (MATERIALS); OXIDATION; OXYGEN; SILICON ALLOYS;

TITANIUM ALLOYS;

EID: 33846693349     PISSN: 0030770X     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11085-006-9043-9     Document Type: Article

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