Electroabsorption modulator performance predicted from band-edge absorption spectra of bulk, quantum-well, and quantum-well-intermixed InGaAsP structures

Solid-State Electronics

Volumn 51, Issue 1, 2007, Pages 38-47

  Morrison, Gordon B ^a   Raring, James W ^c   Wang, Chad S ^b   Skogen, Erik J ^c   Chang, Yu Chia ^b   Sysak, Matt ^b   Coldren, L A ^b  

^a Apogee Photonics   (United States)

^b University of California   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Bandwidth; Bulk material; Chirp; Electroabsorption; Exciton; Franz Keldysh effect; Modulator; Photocurrent spectroscopy; Quantum confined Stark effect; Quantum well; Tunable

Indexed keywords

ABSORPTION; BAND STRUCTURE; ELECTRIC EXCITATION; LIGHT MODULATORS; SEMICONDUCTING INDIUM COMPOUNDS;

BULK MATERIALS; ELECTROABSORPTION; FRANZ KELDYSH EFFECT; PHOTOCURRENT SPECTROSCOPY; QUANTUM CONFINED STARK EFFECT;

SEMICONDUCTOR LASERS;

EID: 33846619579     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.12.003     Document Type: Review

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