Development of EUVL mask blank in AGC

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6349 I, Issue , 2006, Pages

  Sugiyama, Takashi ^a   Kojima, Hiroshi ^a   Ito, Masabumi ^a   Otsuka, Kouji ^a   Yokoyama, Mika ^a   Mikami, Masaki ^a   Hayashi, Kazuyuki ^a   Matsumoto, Katsuhiro ^a   Kikugawa, Shinya ^a  

^a ASAHI GLASS CO LTD   (Japan)

Author keywords

EUV; Extreme ultraviolet lithography; Low defect deposition; Mask blank

Indexed keywords

CRYSTAL DEFECTS; ELECTRONIC EQUIPMENT; GLASS; ROUGHNESS MEASUREMENT; SPECIFICATIONS; SUBSTRATES;

EUV REFLECTOMETRY; EXTREME ULTRAVIOLET LITHOGRAPHY; LOW-DEFECT DEPOSITION; MASK BLANK;

LITHOGRAPHY;

EID: 33846615084     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.686618     Document Type: Conference Paper

References (4)

1. Akio Koike, Kouji Otsuka, Masabumi Ito, Naoki Sugimoto, Hiroshi Kojima, Hitoshi Mishiro and Katsuhiro Matumoto, "Development of Zero Expansion Silica Glass for EUVL Substrate", 3rd International EUV Lithography symposium, Miyazaki, Japan (2004).
2. SEMI P37-1102 Specification for Extreme Ultraviolet Lithography Mask Substrates, SEMI 2001, 2002.
3. SEMI P38-1103 Specification for Absorbing Film Stacks and Multilayers on Extreme Ultraviolet Lithography Mask Blanks, SEMI 2003.
4. P. Kearney, R. Randive, A. Ma, D. Krick, A. Weaver, I. Reiss, D. Abraham, P. Mirkarimi, and E. Spiller, "Overcoming substrate defect decoration effects in EUVL mask blank development", Proc. SPIE, Vol. 5567, pp 800-806, 2004.