Highly efficient electrophosphorescent device with controlled doping profile

SID Conference Record of the International Display Research Conference

Volumn 2005, Issue , 2005, Pages 195-198

  Chin, Byung Doo ^a   Lee, Soo Hyeong ^a   Kim, Jai Kyeong ^a   Lee, Seong Taek ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Samsung SDI   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRON ENERGY LEVELS; ELECTRON TRAPS; ENERGY EFFICIENCY; LIGHT EMISSION;

CONTROLLED DOPING PROFILE; ELECTROPHOSPHORESCENT DEVICE; ENERGY LEVEL ALIGNMENT;

PHOSPHORESCENCE;

EID: 33846564403     PISSN: 10831312     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

1. M.A. Baldo, C. Adachi, S.R. Forrest, Phys. Rev. B. 62, 10967 (2000)
2. M.A. Baldo, M.E. Thompson, and S.R.Forrest, Pure Appl. Chem. 71, 2095 (1999)
3. M.A. Baldo, S.R.Forrest, Phys. Rev. B. 62, 10958 (2000)
4. H. Murata, C.D. Merritt, Z.H. Kafafi, IEEE J. sel. top. quant, elec. 4, 119 (1998)
5. B.W. Andrade, M.E. Thomson, S.R. Forrest, Adv. Matrl. 14, 147 (2002)
6. H. H. Chang, C.C. Wu, C.C. Yang, C.W.Chen, C.C.Lee, Appl. Phys. Lett. 78, 574 (2001).
7. A.B. Chwang, R.C. Kong, J.J. Brown, Appl. Phys. Lett. 80, 725 (2002).
8. C. Hosokawa, H. Higashi, H. Nakamura, T. Kusumoto, Appl. Phys. Lett. 67, 3853 (1985)
9. B. D. Chin, M. C. Sun, S.T. Lee, H.K. Chung, C. H. Lee, Appl. Phys. Lett. 84, 1777 (2004)
10. D. Kolosov, V. Adamovich, P. Djurovich, M.E. Thomson, C. Adachi, J. Am.Chem.Soc., 124, 9945 (2002)
11. F.C. Chen, G. He, Y. Yang, Appl. Phys. Lett. 82, 1006 (2003)
12. H. S. Karlsson, K. Read, R. Haight, J. Vac. Sci. Technol. A. 20, 762 (2002)
13. R.J. Holmes, S. R. Forrest, Y.-J. Tung, R. C. Kwong, and J. J. Brown, S. Garon and M. E. Thompson, Appl. Phys. Lett. 82, 2422 (2003)