Frequency dependence of the harmonic radiation power emitted by a GaAs/AlAs superlattice diode in the terahertz frequency range

The Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005

Volumn 1, Issue , 2005, Pages 140-141

  Paveliev, D G ^a   Koschurinov, Yu I ^a   Lewen, F ^b   Endres, C ^b   Baryshev, A M ^c   Ustinov, V M ^d   Zhukov, A E ^d  

^a LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

^b UNIVERSITY OF COLOGNE   (Germany)

^c UNIVERSITY OF GRONINGEN   (Netherlands)

^d IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

FREQUENCIES; HARMONIC ANALYSIS; RADIATION EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR SUPERLATTICES; SPECTRUM ANALYSIS;

FREQUENCY DEPENDENCE; MOLECULAR SPECTRA; POWER SPECTRUM; SUPERLATTICE DIODES;

SEMICONDUCTOR DIODES;

EID: 33846511558     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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7. D.Paveliev et al, "Characteristics of planar diodes on the basis of highly doped GaAs/AlAs superlattices within the THz range of frequency". Physic and Thechniques of Semiconductors, v.89, N.7, 1141-1147(2004). [in Russian].