Tunneling anisotropic magnetoresistance effect in a p +-(Ga,Mn) As/n +-GaAs Esaki diode

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 1, 2007, Pages 186-190

  Ciorga, M ^a   Einwanger, A ^a   Sadowski, J ^a,b,c   Wegscheider, W ^a   Weiss, D ^a  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b INSTITUTE OF PHYSICS   (Poland)

^c LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ESAKI DIODE DEVICES; MAGNETORESISTANCE EFFECTS; MAGNETOTRANSPORT EXPERIMENTS; TUNNELING ANISOTROPIC MAGNETORESISTANCE;

MAGNETIC ANISOTROPY; MAGNETIC FIELD EFFECTS; MAGNETIC FIELDS; MAGNETORESISTANCE; SEMICONDUCTING GALLIUM ARSENIDE; SILICON WAFERS;

DIODES;

EID: 33846490833     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200673002     Document Type: Conference Paper

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