Inducing magnetism in the Kondo semiconductor CeRhSb through hydrogenation: Antiferromagnetic behavior of the new hydride CeRhSbH0.2

Chemistry of Materials

Volumn 19, Issue 1, 2007, Pages 28-35

  Chevalier, B ^a   Decourt, R ^a   Heying, B ^b   Schappacher, F M ^b   Rodewald, U Ch ^b   Hoffmann, R D ^b   Pottgen R ^b   Eger, R ^c   Simon, A ^c  

^a INST CHIM MATIERE COND BORDEAUX   (France)

^b UNIVERSITY OF MÜNSTER   (Germany)

^c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETISM; CARRIER CONCENTRATION; CERIUM COMPOUNDS; HYDROGENATION; MAGNETIC MOMENTS; SINGLE CRYSTALS; SPECIFIC HEAT; X RAY DIFFRACTION ANALYSIS;

ANTIFERROMAGNETIC ORDERING; ISOMER SHIFT; SPECIFIC HEAT MEASUREMENT; UNIT CELL;

SEMICONDUCTOR MATERIALS;

EID: 33846425356     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm062168a     Document Type: Article

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