Influence of the reactor inlet configuration on the AlGaN growth efficiency

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 413-417

  Yakovlev, E V ^a   Talalaev, R A ^b   Kaluza, N ^c   Hardtdegen, H ^c   Bay, H L ^c  

^a SOFT IMPACT LTD   (Russian Federation)

^b Semiconductor Technology Research GmbH   (Germany)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

A1. AlN nanoparticles; A1. Computer simulation; A3. Metalorganic vapor phase epitaxy; B1. Nitrides

Indexed keywords

CHEMICAL REACTORS; COMPUTER SIMULATION; DEPOSITION; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS;

ALGAN DEPOSITION; GROWTH PROCESS; GROWTH REPRODUCIBILITY; REACTOR INLET CONFIGURATION;

SEMICONDUCTOR GROWTH;

EID: 33846412626     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.047     Document Type: Article

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