Laser activation modification of semiconductor surfaces (LAMSS)

Langmuir

Volumn 22, Issue 26, 2006, Pages 10859-10863

  Zhang, Feng ^a   Pei, Lei ^a   Bennion, Eliot ^a   Jiang, Guilin ^a   Connley, David ^a   Yang, Li ^a   Lee, Michael V ^a   Davis, Robert C ^a   Smentkowski, Vincent S ^b   Strossman, Greg ^c   Linford, Matthew R ^a   Asplund, Matthew C ^a  

^a Brigham Young University   (United States)

^b GE GLOBAL RESEARCH   (United States)

^c CHARLES EVANS AND ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FUNCTIONALIZATION; LASER ACTIVATION MODIFICATION OF SEMICONDUCTOR SURFACES (LAMSS); NANOSECOND PULSE; TRANSPARENT LIQUID;

LASER APPLICATIONS; NANOTECHNOLOGY; SURFACE TREATMENT; TRANSPARENCY; WETTING;

SEMICONDUCTOR LASERS;

EID: 33846366331     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la060562h     Document Type: Article

References (27)

1. Waddell, E. A.; Johnson, T. J.; Kramer, G. W.; Locascio, L. E. Chemical Modification of Substrates by Photo-ablation Under Different Local Atmospheres and Chemical Environments for the Fabrication of Microstructures. U.S. Patent 6,703,189 B2, 2004.
2. Waddell, E. A.; Locascio, L. E.; Kramer, G. W. J. Assoc. Lab. Automat. 2002, 7, 78-82.
3. Dulcey, C. S.; Georger, J. H., Jr.; Krauthamer, V.; Stenger, D. A.; Fare, T. L.; Calvert, J. M. Science 1991, 252, 551-554.
4. Calvert, J. M.; Georger, J. H.; Peckerar, M. C.; Pehrsson, P. E.; Schnur, J. M.; Schoen, P. E. Thin Solid Films 1992, 210/211, 359-363.
5. Balgar, T.; Franzka, S.; Hasselbrink, E.; Hartmann, N. Appl. Phys. A 2006, 82, 15-18.
6. Balgar, T.; Franzka, S.; Hartmann, N. Appl. Phys. A 2006, 82, 689-695.
7. Shadnam, M. R.; Kirkwood, S. E.; Fedosejevs, R.; Amirfazli, A. Langmuir 2004, 20, 2667-2676.
8. Chang, W.-S.; Choi, M.-J.; Kim, J.-G.; Cho, S.-H.; Whang, K.-H. Int. J. Precis. Eng. Manuf. 2006, 7, 13-17.
9. Linford, M. R. Chemical Functionalization of Hydrogen-Terminated Silicon Surfaces: The First Self-Assembled Monolayers on Silicon. Ph.D. Thesis, Stanford University, Stanford, CA, 1996.
10. Cicero, R. L.; Linford, M. R.; Chidsey, C. E. D. Langmuir 2000, 16, 5688-5695.
11. Effenberger, F.; Götz, G.; Bidlingmaier, B.; Wezstein, M. Angew. Chem., Int. Ed. 1998, 37, 2462-2464.
12. Wojtyk, J. T. C.; Tomietto, M.; Boukherroub, R.; Wayner, D. D. M. J. Am. Chem. Soc. 2001, 123, 1535-1536.
13. Sieval, A. B.;Linke, R.; Zuilhof, H.; Sudhölter.E. J. R. Adv. Mater. 2000, 12, 1457-1460.
14. Eves, B. J.; Sun, Q.-Y.; Lopinski, G. P.; Zuilhof, H. J. Am. Chem. Soc. 2004, 126, 14318-14319.
15. Cai, W.; Lin, Z.; Strother, T.; Smith, L. M.; Hamers, R. J. J. Phys. Chem. B 2002, 106, 2656-2664.
16. Lee, E. J.; Ha, J. S.; Sailor, M. J. J. Am. Chem. Soc. 1995, 117, 8295-8296.
17. Lee, E. J.; Bitner, T. W.; Ha, J. S.; Shane, M. J.; Sailor, M. J. J. Am. Chem. Soc. 1996, 118, 5375-5382.
18. Yang, L.; Lua, Y.-Y.; Lee, M. V.; Linford, M. R. Acc. Chem. Res. 2005, 38, 933-942.
19. Experimental conditions for the results in this and the next two paragraphs: 532 nm from a Nd:YAG laser, 4 ns pulse width, 5-10 μJ pulse energy, spot diameter ca. 10 μm.
20. Ohlhausen, J. A.; Keenan, M. R.; Kotula, P. G.; Peebles, D. E. Appl. Surf. Sci. 2004, 231-232, 230-234.
21. Smentkowski, V. S.; Ohlhausen, J. A.; Kotula, P. G.; Keenan, M. R. Appl. Surf. Sci. 2004, 231-232, 245-249.
22. Average values and errors (standard deviations) in this work are from three measurements.
23. 3 + SiHO + Si + SiH).
24. Archibald, R. C; Greensfelder, B. S.; Holzman, G.; Rowe, D. H. Ind. Eng. Chem. 1960, 52, 745- 750.
25. Khorasheh, F.; Gray, M. R. Ind. Eng. Chem. Res. 1993, 32, 1853-1863.
26. Shi, X. Y.; Sanedrin, R. J.; Zhou, F. M. J. Phys. Chem. B 2002, 106, 1173-1180.
27. Ren, K. F.; Ji, J.; Shen, J. C. Bioconjugate Chem. 2006, 17, 77-83.