Magnetoresistance effect in a both magnetically and electrically modulated nanostructure

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 362, Issue 5-6, 2007, Pages 489-493

  Lu, Mao Wang ^a   Yang, Guo Jian ^a  

^a BEIJING NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC MATERIALS; FERROMAGNETISM; MAGNETIZATION; MAGNETORESISTANCE; NANOSYSTEMS;

ANTIPARALLEL MAGNETIZATIONS; APPLIED VOLTAGES; FERROMAGNETIC STRIPS; MAGNETORESISTANCE EFFECTS; MAGNETORESISTANCE RATIO; SEMICONDUCTOR HETEROSTRUCTURE; VOLTAGE-TUNABLE;

TWO DIMENSIONAL ELECTRON GAS;

EID: 33846362103     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2006.10.058     Document Type: Article

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