Physical and technological limitations of NanoCMOS devices to the end of the roadmap and beyond

EPJ Applied Physics

Volumn 36, Issue 3, 2006, Pages 197-214

  Deleonibus, S ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; LOGIC DEVICES; MICROELECTRONICS; NANOSTRUCTURED MATERIALS;

BURIED INSULATORS; DIAMOND/GRAPHITE CARBON; DRAIN ENGINEERING; NANOCMOS;

CMOS INTEGRATED CIRCUITS;

EID: 33846344010     PISSN: 12860042     EISSN: 12860050     Source Type: Journal    
DOI: 10.1051/epjap:2006158     Document Type: Article

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