Netlisting and modeling well-proximity effects

IEEE Transactions on Electron Devices

Volumn 53, Issue 9, 2006, Pages 2179-2186

  Watts, Josef ^a,b   Su, Ke Wei ^c   Basel, Mark ^a,d  

^a IEEE   (United States)

^b IBM RESEARCH   (United States)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^d MENTOR GRAPHICS CORPORATION   (United States)

Author keywords

Integrated circuit ion implantation; Integrated circuit layout; Integrated circuit modeling; MOSFETS

Indexed keywords

INTEGRATED CIRCUIT ION IMPLANTATION; INTEGRATED CIRCUIT MODELING; PROXIMITY LAYOUT EFFECTS;

CIRCUIT SIMULATION; INTEGRATED CIRCUIT LAYOUT; ION IMPLANTATION; MOSFET DEVICES; SEMICONDUCTOR DEVICE MODELS;

CMOS INTEGRATED CIRCUITS;

EID: 33846289656     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.880176     Document Type: Article

References (4)

1. G. Hobler et al., "Monte Carlo simulation of ion implantation into two-and three-dimensional structures," IEEE Trans. Compul-Aided Des., vol. 8, no. 5, pp. 450-459, May 1989.
2. T. B. Hook et al., "Lateral ion implant straggle and mask proximity effect," IEEE Trans. Electron Devices, vol. 50, no. 9, pp. 1946-1951, Sep. 2003.
3. Y.-M. Sheu et al., "Modeling well edge proximity effect on highly-scaled MOSFETs," in Proc. CICC, Sep. 2005, pp. 193-196.
4. Compact Model Council, Guidelines for extracting well proximity effect instance parameters. [Online]. Available: http://www.eigroup.org/cmc/ proximity_effect_modeling/wpe_guidelines_v2.0.pdf