Anomalous photoluminescence behavior from amorphous Ge quantum dots produced by buffer-layer-assisted growth

Applied Physics Letters

Volumn 90, Issue 1, 2007, Pages

  Bhatti, A S ^a,b   Antonov, V N ^a   Swaminathan, P ^a   Palmer, J S ^a   Weaver, J H ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b Department of Electrical Computer Engineering   (Pakistan)

Author keywords

[No Author keywords available]

Indexed keywords

ANOMALOUS PHOTOLUMINESCENCE; BUFFER LAYER ASSISTED GROWTH; LASER INTENSITY; XE BUFFER LAYERS;

AMORPHOUS MATERIALS; DENSITY (SPECIFIC GRAVITY); GERMANIUM COMPOUNDS; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; THERMAL EFFECTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33846113133     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2426892     Document Type: Article

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