Interfacial and quantum well effects on ac magnetotransport of La 0.7Sr0.3MnO3/La1.4Sr 1.6Mn2O7 composites

Applied Physics Letters

Volumn 89, Issue 26, 2006, Pages

  Hsu, C Y ^a   Chou, Hsiung ^c   Liao, B Y ^c   Huang, J C A ^a,b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG CHENG UNIVERSITY   (Taiwan)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC IMPEDANCE; GRAIN BOUNDARIES; GRANULAR MATERIALS; MAGNETIC PROPERTIES; MAGNETORESISTANCE; SEMICONDUCTOR QUANTUM WELLS;

COMPLEX IMPEDANCE (CI); MAGNETOCONDUCTANCE (MC); TRAP-STATE CONTRIBUTIONS;

LANTHANUM COMPOUNDS;

EID: 33846072517     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2422880     Document Type: Article

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