Interfaces between γ-Al2 O3 and silicon

Materials Science in Semiconductor Processing

Volumn 9, Issue 6, 2006, Pages 949-953

  Boulenc, P ^a,b   Devos, I ^b  

^a STMICROELECTRONICS   (France)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

Al2 O3; Epitaxy; High ; Interface

Indexed keywords

CRYSTALLINE MATERIALS; INSULATING MATERIALS; INTERFACES (MATERIALS); PROBABILITY DENSITY FUNCTION; SILICON COMPOUNDS; SURFACE TREATMENT;

BUFFER LAYERS; DENSITY FUNCTIONAL THEORY; RECONSTRUCTED SURFACES; STRUCTURAL MATCHING;

ALUMINUM COMPOUNDS;

EID: 33846062178     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.10.043     Document Type: Article

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