Electronic structure of the Mott insulator LaVO3 in a quantum well geometry

Applied Physics Letters

Volumn 89, Issue 25, 2006, Pages

  Hotta, Y ^a   Wadati, H ^a   Fujimori, A ^a   Susaki, T ^b   Hwang, H Y ^b,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; INSULATING MATERIALS; INTERFACES (MATERIALS); MOLECULAR STRUCTURE; SEMICONDUCTOR QUANTUM WELLS; X RAY PHOTOELECTRON SPECTROSCOPY;

EMISSION ANGLE; FLAT SURFACES; MOTT INSULATORS;

LANTHANUM COMPOUNDS;

EID: 33845915959     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2422898     Document Type: Article

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