Kinetic regime of step motion on the Si(111) (1 × 1) surface

Surface and Interface Analysis

Volumn 38, Issue 12-13, 2006, Pages 1632-1635

  Man, K L ^a   Tang, W X ^a,b   Jin, X F ^b   Altman, M S ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b FUDAN UNIVERSITY   (China)

Author keywords

Island decay; Kinetic length; Low energy electron microscopy; Si(111)

Indexed keywords

DIFFUSION; ELECTRON MICROSCOPY; KINETIC ENERGY; PHOTOLITHOGRAPHY;

ISLAND DECAY; KINETIC LENGTH; LOW-ENERGY ELECTRON MICROSCOPY; VANISHING ISLAND;

SILICON;

EID: 33845915311     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2428     Document Type: Conference Paper

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