A high-sensitivity active magnetic probe using CMOS integrated circuits technology

IEEE Topical Meeting on Electrical Performance of Electronic Packaging

Volumn 2005, Issue , 2005, Pages 103-106

  Aoyama, Satoshi ^a   Kawahito, Shoji ^a   Yasui, Takeshi ^b   Yamaguchi, Masahiro ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Active magnetic probe; CMOS SOI; Near field measurement

Indexed keywords

CMOS SOI TECHNOLOGY; ELECTRICAL SWITCHING; MAGNETIC PROBES;

ELECTRIC FIELD EFFECTS; PROBES; SENSITIVITY ANALYSIS; SILICON ON INSULATOR TECHNOLOGY; SWITCHING SYSTEMS;

CMOS INTEGRATED CIRCUITS;

EID: 33845873586     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EPEP.2005.1563712     Document Type: Conference Paper

References (5)

1. Y.Gao, I.Wolff: IEEE.Trans.Microwave Theory & Tech.44,911,(1996)
2. M.Yamaguchi, S.Yabukami,et al.: Ext.Abst.1999 Int.Conf.on SSDM,594(1999)
3. N.Tamaki, N.Masuda, et al.: Trans.IEICE,vol.J87C3,335-342,(2004)
4. E.Yamazaki, H.Park, et al.: Jpn.J.Appl.Phys. Vol.41,pp.L864-866,(2002)
5. K.Taira, H.Ota: MWE2004,Microwave Workshop Digest,p339-344,(2004)