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Volumn 54, Issue 2, 2006, Pages 217-223

Lateral carrier tunnelling in stacked In(Ga)As/GaAs quantum rings

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TUNNELING; CONTINUOUS WAVES; EXCITON RECOMBINATION DYNAMICS; QUANTUM RINGS;

EID: 33845743998     PISSN: 14346028     EISSN: 14346036     Source Type: Journal    
DOI: 10.1140/epjb/e2006-00444-x     Document Type: Article
Times cited : (11)

References (32)
  • 25
    • 0001089438 scopus 로고    scopus 로고
    • The effective strained InAs band gap energy (778 meV), the energy barrier for electrons and holes (465 and 276 meV), respectively, and the electron and hole effective masses for InAs and GaAs are taken from: O. Stier, M. Grundmann, D. Bimberg, Phys. Rev. B 59, 5688 (1999);
    • (1999) Phys. Rev. B , vol.59 , pp. 5688
    • Stier, O.1    Grundmann, M.2    Bimberg, D.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.