The effect of processes on the reliability of GaN based light emitting diodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6355, Issue , 2006, Pages

  Xiao, Zhiguo ^a   He, Xiaoguang ^b   Ma, Kevin ^b   Chen, Xiangdong ^b   Wu, Shengli ^b   Ke, Zhijie ^b  

^a Dalian LUMING Science and Technology Group COLTD   (China)

^b Dalian LUMEI Optoelectronics Corp   (China)

Author keywords

GaN; Light emitting diodes; Reliability

Indexed keywords

DEVICE RELIABILITY; STABLE DEVICES;

GALLIUM NITRIDE; MANUFACTURE; RELIABILITY;

LIGHT EMITTING DIODES;

EID: 33845665384     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.691155     Document Type: Conference Paper

References (19)

1. R. Paszkiewicz,B. Paszkiewicz, R. Korbutowicz et al. MOVPE GaN Grown on Alternative Substrates. Cryst. Res. Technol. 36 (2001),971-977
2. Chen changhua et al, InGaN/AlGaN/GaN MULTILAYER BUFFER FOR GROWTH OF GaN ON SAPPHIRE, USP6,495,867
3. Hyunsoo Kim, Ji-Myon Lee, Chul Huh, Sang-Woo Kim, et al. Modeling of a GaN-based light-emitting diode for uniform current spreading.Appl. Phys. Lett., 77(2000), 1903-1904
4. Yongsheng Zhao et al, HIGH POWER, HIGH LUMINOUS FLUX LIGHT EMITTING DIODE AND METHOD OF MAKING SAME, USP6,650,018
5. N.A.Papanicolaou et al, High temperature characteristics of Ti/Al and Cr/Al ohmic contacts to n-type GaN, Solid-State Electronics, 46 (2002), 1975-1981
6. B.Van Daele, G. Van Tendeloo et al. The role of Al on Ohmic contact formation on n-type GaN and AlGaN/GaN., Appl. Phys. Lett.,87(2005), 061905-061907
7. Z.Z. Chen, Z.X. Qin, C.Y. Hu, et al. Ohmic contact formation of Ti/Al/Ni/Au to n-GaN by two-step annealing method. Materials Science and Engineering Bill (2004) 36-39
8. N.A. Papanicolaou, K. Zekentes. High temperature characteristics of Ti/Al and Cr/Al ohmic contacts to n-type GaN. Solid-State Electronics 46 (2002) 1975-1981
9. K.V. Vassilevski, M.G. Rastegaeva, A.I. Babanin et al.Ti/Al ohmic contacts to n-type gallium nitride. Materials Science and Engineering B43(1997) 292-295
10. J. Yan, M.J. Kappers, Z.H. Barber, et al. Effects of oxygen plasma treatments on the formation of ohmic contacts to GaN. Applied Surface Science 234 (2004) 328-332
11. Z.F. Fan, S.N. Mohammad, W. Kirn, O. Aktas, A.E. Botchkarev, H. Morkoc, Appl. Phys. Lett. 68 (1996) 1672.
12. H.W. Choi, S.J. Chua, X.J. Kang, Phys. Stat. Sol. 188 (a)(2001) 399.
13. H.W. Jang, J.L. Lee, J. Electrochem. Soc. 150 (2003) G513.
14. S. Ruvimov, Z. Liliental-Weber, J. Washburn, K.J. Duxstad,E.E. Haller, Z.F. Fan, S.N. Mohammad, W. Kim, A.E.Botchkarev, H. Morkoc, Appl. Phys. Lett. 69 (1996) 1556
15. S.M. Sze, Semiconductor Devices Physics and Technology, John Wiley & Sons, New York, 1985.
16. D.W. Jenkins, J.D. Dow, Phys. Rev. B39 (1989) 3317.
17. S. Nakamura, S.F. Chichibu, Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes, Taylor and Francis, London, 2000.
18. C.G. Van de Walle, J. Vac. Sci. Technol. A21 (2003) S182.
19. Jong Kyu Kim, Jong-Lam Lee, et al. Effect of surface treatment by (NH4)2Sx solution on the reduction of ohmic contact resistivity of p-type GaN. J. Vac. Sci. Technol. B 17(2.), 1999