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Journal of Optoelectronics and Advanced Materials

Volumn 8, Issue 6, 2006, Pages 2039-2043

EXAFS study of local order in the amorphous chalcogenide semiconductor Ge2Sb2Te5

(5) Paesler, M A a Baker, D A a Lucovsky, G a Edwards, A E b Taylor, P C c

a NORTH CAROLINA STATE UNIVERSITY (United States)

b AIR FORCE RESEARCH LABORATORY (United States)

c Department of Metallurgical and Materials Engineering (United States)

Author keywords

Chalcogenide; EXAFS; Local order; Switching material

Indexed keywords

CHALCOGENIDES; CONSTRAINT THEORY; GERMANIUM COMPOUNDS; SWITCHING;

AMORPHOUS CHALCOGENIDE; BOND CONSTRAINT THEORIES; EXAFS; LOCAL ORDER; STRUCTURE AND PROPERTIES; SWITCHING APPLICATIONS; TECHNOLOGICAL ADVANCES; VALENCE ALTERNATION PAIRS;

ANTIMONY COMPOUNDS;

EID: 33845664083 PISSN: 14544164 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (6)

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