Integrated BiCMOS p-i-n photodetectors with high bandwidth and high responsivity

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 12, Issue 6, 2006, Pages 1469-1474

  Nemecek, Alexander ^b   Zach, Gerald ^b   Swoboda, Robert ^c   Oberhauser, Klaus ^a,b   Zimmermann, Horst ^a,b  

^a IEEE

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^c A3PICs Electronics Development GmbH   (Austria)

Author keywords

Integrated optoelectronics; Optoelectronic integrated circuits (OEICs); p i n technology; Photodetector; Photodiode

Indexed keywords

BANDWIDTH; CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; INTEGRATED OPTOELECTRONICS; PHOTODIODES; SEMICONDUCTOR DIODES; SIGNAL RECEIVERS;

CARRIER DIFFUSION; DARK CURRENT; P-I-N TECHNOLOGY; SYSTEM ON CHIP (SOC);

PHOTODETECTORS;

EID: 33845655929     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2006.885145     Document Type: Article

References (22)

1. J. Sturm, M. Leifhelm, H. Schatzmayr, St. Groiß, and H. Zimmermann, "Optical receiver IC for CD/DVD/blue-laser application," IEEE J. Solid-State Circuits, vol. 40, no. 7, pp. 1406-1413, Jul. 1905.
2. M. Haurylau, H. Chen, and J. Zhang, et al., "On-chip optical interconnect roadmap: Challenges and critical directions," in Proc. 2nd Int. Conf. Group IV Photon., 1905, pp. 17-19.
3. M. Rouviére, L. Vivien, and X. Le Roux, et al., "35 GHz bandwidth germanium-on-silicon photodetector," in Proc. 2nd Int. Conf. Group IV Photon., 1905, pp. 174-176.
4. M. Jutzi, M. Berroth, G. Wohl, M. Oehme, and E. Kasper, "Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth," IEEE Photon. Technol. Lett., vol. 17, no. 7, pp. 1510-1512, Jul. 1905.
5. G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, "High-speed germanium-on-SOI lateral PIN photodiodes," IEEE Photon. Technol. Lett., vol. 16, no. 11, pp. 2547-2549, Nov. 1904.
6. H. Zimmermann, Silicon Optoelectronic Integrated Circuits. Berlin, Germany: Springer-Verlag, 1904.
7. A. Ghazi, H. Zimmermann, and P. Seegebrecht, "CMOS photodiode with enhanced responsivity for the UV/blue spectral range," IEEE Trans. Electron. Devices, vol. 49, no. 7, pp. 1124-1128, Jul. 1902.
8. H. Zimmermann, H. Dietrich, A. Ghazi, and P. Seegebrecht, "Fast CMOS-integrated finger photodiodes for a wide spectral range," in Proc. 32nd Eur. Solid-State Device Res. Conf., 1902, pp. 435-438.
9. A. Nemecek, K. Oberhauser, G. Zach, and H. Zimmermann, "Fast and efficient integrated silicon PIN-finger photodetector from ultraviolet up to near infrared," in Proc. 2nd Int. Conf. Group IV Photon., 1905, pp. 108-110.
10. J. Burm, K. I. Litvin, and D. W. Woodard, et al., "High-frequency, high-efficiency MSM photodetectors," IEEE J. Quantum Electron., vol. 31, no. 8, pp. 1504-1509, Aug. 1995.
11. 2 -Si Bragg reflectors," IEEE Photon. Technol. Lett., vol. 9, no. 6, pp. 806-808, Jun. 1997.
12. T. Miyata, et al., "Correction of the intensity-dependent phase delay in a silicon avalanche photodiode by controlling its reverse bias voltage," IEEE J. Quantum Electron., vol. 39, no. 7, pp. 919-923, Jul. 1903.
13. J. Schaub, R. Li, S. M. Csutak, and J. C. Campbell, "High-speed monolithic silicon photo-receivers on high resistivity and SOI substrates," J. Lightw. Technol., vol. 19, no. 7, pp. 272-278, Feb. 1901.
14. H. Zimmermann and M. Muller, "Ultralow-capacitance lateral p-i-n photodiode in a thin c-Si film," IEEE Trans. Nucl. Sci., vol. 49, no. 4, pp. 1932-1936, Aug. 1902.
15. S. M. Csutak, J. D. Schaub, W. E. Wu, and J. C. Campbell, "8 Gb/s CMOS compatible monolithically integrated silicon optical receiver," in Proc. Opt. Fibre Commun. Conf., 1902, pp. 585-586.
16. S. M. Csutak, J. D. Schaub, W. E. Wu, R. Shimer, and J. C. Campbell, "CMOS-compatible high-speed planar silicon photodiodes fabricated on SOI substrates," IEEE J. Quantum Electron., vol. 38, no. 2, pp. 193-196, Feb. 1902.
17. M. Yamamoto, M. Kubo, and K. Nakao, "Si-OEIC with a built-in PIN-photodiode," IEEE Trans. Electron. Devices, vol. 42, no. 1, pp. 58-63, Jan. 1995.
18. K. Oberhauser, A. Nemecek, C. Sünder, and H. Zimmermann, "Universal integrated PIN photodetector," in Proc. 34th Eur. Solid-State Device Res. Conf., 1904, pp. 349-352.
19. R. Swoboda and H. Zimmermann, "Monolithic optical receiver in 0.5 μm BiCMOS technology for wavelengths up to 850 nm," in Proc. 2nd Int. Conf. Group IV Photon., 1905, pp. 180-182.
20. S. M. Csutak, J. D. Schaub, W. E. Wu, R. Shimer, and J. C. Campbell, "High-speed monolithically integrated silicon photoreceivers fabricated in 130-nm CMOS technology," J. Lightw. Technol., vol. 19, no. 9, pp. 1724-1729, Sep. 1902.
21. S. Radovanovic, A.-J. Annema, and B. Nauta, "A 3-Gb/s optical detector in standard CMOS for 850-nm optical communication," IEEE J. Solid-State Circuits, vol. 40, no. 8, pp. 1706-1717, Aug. 1905.
22. R. Swoboda, J. Knorr, and H. Zimmermann, "A 5 Gbps OEIC with voltage-up-converter," IEEE J. Solid-State Circuits, vol. 40, no. 7, pp. 1521-1526, Jul. 1905.