Role of spin polarized tunneling in magnetoresistance and low temperature minimum of polycrystalline La1-xKxMnO3 (x = 0·05, 0·1, 0·15) prepared by pyrophoric method

Bulletin of Materials Science

Volumn 29, Issue 6, 2006, Pages 633-636

  Das, Soma ^a   Dey, T K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Low temperature resistivity; Magnetoresistance; Manganites; Spin polarized tunneling

Indexed keywords

LOW TEMPERATURE RESISTIVITY; MANGANITES; PHENOMENOLOGICAL MODELS; SPIN POLARIZED TUNNELING;

CHARGE CARRIERS; LANTHANUM COMPOUNDS; MAGNETIC FIELD EFFECTS; MAGNETIC FIELDS; MAGNETORESISTANCE; METAL INSULATOR BOUNDARIES; POLARIZATION;

POLYCRYSTALLINE MATERIALS;

EID: 33845570106     PISSN: 02504707     EISSN: None     Source Type: Journal    
DOI: 10.1007/s12034-006-0015-0     Document Type: Conference Paper

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